Selective area growth of III-V nanowires and their heterostructures on silicon in a nanotube template: towards monolithic integration of nano-devices
Identifieur interne : 000569 ( Main/Repository ); précédent : 000568; suivant : 000570Selective area growth of III-V nanowires and their heterostructures on silicon in a nanotube template: towards monolithic integration of nano-devices
Auteurs : RBID : Pascal:13-0219169Descripteurs français
- Pascal (Inist)
- Croissance sélective, Aire sélective, Nanofil, Nanomatériau, Hétérostructure, Nanotube, Réaction dirigée, Nanoélectronique, Catalyseur, Mécanisme croissance, Semiconducteur III-V, Epitaxie, Hétéroépitaxie, Synthèse nanomatériau, Monocristal, Antimoniure d'indium, Morphologie, Arséniure d'indium, Composé III-V, Hétérointerface, Plan expérience, Interface, Structure coeur couche, Dispositif optoélectronique, Substrat silicium, InAs, InSb, 8107V, 8107B, 8107D, 8116B, Intermélangeage, Structure coeur coque.
English descriptors
- KwdEn :
- Catalysts, Core shell structure, Epitaxy, Experimental design, Growth mechanism, Heteroepitaxy, Heterointerface, Heterostructures, III-V compound, III-V semiconductors, Indium antimonides, Indium arsenides, Interfaces, Intermixing, Monocrystals, Morphology, Nanoelectronics, Nanomaterial synthesis, Nanostructured materials, Nanotubes, Nanowires, Optoelectronic devices, Selective area, Selective growth, Template reaction.
Abstract
We demonstrate a catalyst-free growth technique to directly integrate III-V semiconducting nanowires on silicon using selective area epitaxy within a nanotube template. The nanotube template is selectively filled by homo- as well as heteroepitaxial growth of nanowires with the morphology entirely defined by the template geometry. To demonstrate the method single-crystalline InAs wires on Si as well as InAs-InSb axial heterostructure nanowires are grown within the template. The achieved heterointerface is very sharp and confined within 5-6 atomic planes which constitutes a primary advantage of this technique. Compared to metal-catalyzed or self-catalyzed nanowire growth processes, the nanotube template approach does not suffer from the often observed intermixing of (hetero-) interfaces and non-intentional core-shell formation. The sequential deposition of different material layers within a nanotube template can therefore serve as a general monolithic integration path for III-V based electronic and optoelectronic devices on silicon.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 000B65
Links to Exploration step
Pascal:13-0219169Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Selective area growth of III-V nanowires and their heterostructures on silicon in a nanotube template: towards monolithic integration of nano-devices</title><author><name sortKey="Das Kanungo, Pratyush" uniqKey="Das Kanungo P">Pratyush Das Kanungo</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IBM Research-Zurich, Säumerstrasse 4</s1><s2>8803 Rüschlikon</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8803 Rüschlikon</wicri:noRegion></affiliation></author><author><name sortKey="Schmid, Heinz" uniqKey="Schmid H">Heinz Schmid</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IBM Research-Zurich, Säumerstrasse 4</s1><s2>8803 Rüschlikon</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8803 Rüschlikon</wicri:noRegion></affiliation></author><author><name sortKey="Bjork, Mikael T" uniqKey="Bjork M">Mikael T. Björk</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>QuNano AB, Scheelevagen 17, Ideon Science Park</s1><s2>22370 Lund</s2><s3>SWE</s3><sZ>3 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>22370 Lund</wicri:noRegion></affiliation></author><author><name sortKey="Gignac, Lynne M" uniqKey="Gignac L">Lynne M. Gignac</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>IBM Research-Watson</s1><s2>Yorktown Heights, NY 10598</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>IBM Research-Watson</wicri:noRegion></affiliation></author><author><name sortKey="Breslin, Chris" uniqKey="Breslin C">Chris Breslin</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>IBM Research-Watson</s1><s2>Yorktown Heights, NY 10598</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>IBM Research-Watson</wicri:noRegion></affiliation></author><author><name sortKey="Bruley, John" uniqKey="Bruley J">John Bruley</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>IBM Research-Watson</s1><s2>Yorktown Heights, NY 10598</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>IBM Research-Watson</wicri:noRegion></affiliation></author><author><name sortKey="Bessire, Cedric D" uniqKey="Bessire C">Cedric D. Bessire</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IBM Research-Zurich, Säumerstrasse 4</s1><s2>8803 Rüschlikon</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8803 Rüschlikon</wicri:noRegion></affiliation></author><author><name sortKey="Riel, Heike" uniqKey="Riel H">Heike Riel</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IBM Research-Zurich, Säumerstrasse 4</s1><s2>8803 Rüschlikon</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8803 Rüschlikon</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0219169</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0219169 INIST</idno><idno type="RBID">Pascal:13-0219169</idno><idno type="wicri:Area/Main/Corpus">000B65</idno><idno type="wicri:Area/Main/Repository">000569</idno></publicationStmt><seriesStmt><idno type="ISSN">0957-4484</idno><title level="j" type="abbreviated">Nanotechnology : (Bristol, Print)</title><title level="j" type="main">Nanotechnology : (Bristol. Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Catalysts</term><term>Core shell structure</term><term>Epitaxy</term><term>Experimental design</term><term>Growth mechanism</term><term>Heteroepitaxy</term><term>Heterointerface</term><term>Heterostructures</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium antimonides</term><term>Indium arsenides</term><term>Interfaces</term><term>Intermixing</term><term>Monocrystals</term><term>Morphology</term><term>Nanoelectronics</term><term>Nanomaterial synthesis</term><term>Nanostructured materials</term><term>Nanotubes</term><term>Nanowires</term><term>Optoelectronic devices</term><term>Selective area</term><term>Selective growth</term><term>Template reaction</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Croissance sélective</term><term>Aire sélective</term><term>Nanofil</term><term>Nanomatériau</term><term>Hétérostructure</term><term>Nanotube</term><term>Réaction dirigée</term><term>Nanoélectronique</term><term>Catalyseur</term><term>Mécanisme croissance</term><term>Semiconducteur III-V</term><term>Epitaxie</term><term>Hétéroépitaxie</term><term>Synthèse nanomatériau</term><term>Monocristal</term><term>Antimoniure d'indium</term><term>Morphologie</term><term>Arséniure d'indium</term><term>Composé III-V</term><term>Hétérointerface</term><term>Plan expérience</term><term>Interface</term><term>Structure coeur couche</term><term>Dispositif optoélectronique</term><term>Substrat silicium</term><term>InAs</term><term>InSb</term><term>8107V</term><term>8107B</term><term>8107D</term><term>8116B</term><term>Intermélangeage</term><term>Structure coeur coque</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We demonstrate a catalyst-free growth technique to directly integrate III-V semiconducting nanowires on silicon using selective area epitaxy within a nanotube template. The nanotube template is selectively filled by homo- as well as heteroepitaxial growth of nanowires with the morphology entirely defined by the template geometry. To demonstrate the method single-crystalline InAs wires on Si as well as InAs-InSb axial heterostructure nanowires are grown within the template. The achieved heterointerface is very sharp and confined within 5-6 atomic planes which constitutes a primary advantage of this technique. Compared to metal-catalyzed or self-catalyzed nanowire growth processes, the nanotube template approach does not suffer from the often observed intermixing of (hetero-) interfaces and non-intentional core-shell formation. The sequential deposition of different material layers within a nanotube template can therefore serve as a general monolithic integration path for III-V based electronic and optoelectronic devices on silicon.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0957-4484</s0></fA01><fA03 i2="1"><s0>Nanotechnology : (Bristol, Print)</s0></fA03><fA05><s2>24</s2></fA05><fA06><s2>22</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Selective area growth of III-V nanowires and their heterostructures on silicon in a nanotube template: towards monolithic integration of nano-devices</s1></fA08><fA11 i1="01" i2="1"><s1>DAS KANUNGO (Pratyush)</s1></fA11><fA11 i1="02" i2="1"><s1>SCHMID (Heinz)</s1></fA11><fA11 i1="03" i2="1"><s1>BJÖRK (Mikael T.)</s1></fA11><fA11 i1="04" i2="1"><s1>GIGNAC (Lynne M.)</s1></fA11><fA11 i1="05" i2="1"><s1>BRESLIN (Chris)</s1></fA11><fA11 i1="06" i2="1"><s1>BRULEY (John)</s1></fA11><fA11 i1="07" i2="1"><s1>BESSIRE (Cedric D.)</s1></fA11><fA11 i1="08" i2="1"><s1>RIEL (Heike)</s1></fA11><fA14 i1="01"><s1>IBM Research-Zurich, Säumerstrasse 4</s1><s2>8803 Rüschlikon</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="02"><s1>QuNano AB, Scheelevagen 17, Ideon Science Park</s1><s2>22370 Lund</s2><s3>SWE</s3><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>IBM Research-Watson</s1><s2>Yorktown Heights, NY 10598</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s2>225304.1-225304.6</s2></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>22480</s2><s5>354000503035780090</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>18 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0219169</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Nanotechnology : (Bristol. Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>We demonstrate a catalyst-free growth technique to directly integrate III-V semiconducting nanowires on silicon using selective area epitaxy within a nanotube template. The nanotube template is selectively filled by homo- as well as heteroepitaxial growth of nanowires with the morphology entirely defined by the template geometry. To demonstrate the method single-crystalline InAs wires on Si as well as InAs-InSb axial heterostructure nanowires are grown within the template. The achieved heterointerface is very sharp and confined within 5-6 atomic planes which constitutes a primary advantage of this technique. Compared to metal-catalyzed or self-catalyzed nanowire growth processes, the nanotube template approach does not suffer from the often observed intermixing of (hetero-) interfaces and non-intentional core-shell formation. The sequential deposition of different material layers within a nanotube template can therefore serve as a general monolithic integration path for III-V based electronic and optoelectronic devices on silicon.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A07V</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A07B</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A07D</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A16B</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Croissance sélective</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Selective growth</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Aire sélective</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Selective area</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Nanofil</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Nanowires</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Heterostructures</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Nanotube</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Nanotubes</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Réaction dirigée</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Template reaction</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Reacción dirigida</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Nanoélectronique</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Nanoelectronics</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Catalyseur</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Catalysts</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Epitaxie</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Epitaxy</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Hétéroépitaxie</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Heteroepitaxy</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Heteroepitaxia</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Synthèse nanomatériau</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Nanomaterial synthesis</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Síntesis nanomaterial</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Monocristal</s0><s5>15</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Monocrystals</s0><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Antimoniure d'indium</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Indium antimonides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Morphologie</s0><s5>29</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Morphology</s0><s5>29</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>30</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>30</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Composé III-V</s0><s5>31</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>III-V compound</s0><s5>31</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>31</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Hétérointerface</s0><s5>32</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Heterointerface</s0><s5>32</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Heterointerfase</s0><s5>32</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Plan expérience</s0><s5>33</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Experimental design</s0><s5>33</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Interface</s0><s5>34</s5></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Interfaces</s0><s5>34</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Structure coeur couche</s0><s5>35</s5></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Core shell structure</s0><s5>35</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Dispositif optoélectronique</s0><s5>36</s5></fC03><fC03 i1="24" i2="3" l="ENG"><s0>Optoelectronic devices</s0><s5>36</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>Substrat silicium</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>InSb</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>8107V</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>8107B</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="30" i2="3" l="FRE"><s0>8107D</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="31" i2="3" l="FRE"><s0>8116B</s0><s4>INC</s4><s5>74</s5></fC03><fC03 i1="32" i2="3" l="FRE"><s0>Intermélangeage</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="32" i2="3" l="ENG"><s0>Intermixing</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="33" i2="3" l="FRE"><s0>Structure coeur coque</s0><s4>CD</s4><s5>97</s5></fC03><fC03 i1="33" i2="3" l="ENG"><s0>Core shell structure</s0><s4>CD</s4><s5>97</s5></fC03><fC03 i1="33" i2="3" l="SPA"><s0>Estructura núcleo cascarón</s0><s4>CD</s4><s5>97</s5></fC03><fN21><s1>203</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000569 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 000569 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:13-0219169
|texte= Selective area growth of III-V nanowires and their heterostructures on silicon in a nanotube template: towards monolithic integration of nano-devices
}}
| This area was generated with Dilib version V0.5.77. |  |